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IGBT Transistors
Manufacturer: STMicroelectronics
Description: TRENCH GATE FIELD-STOP IGBT, M S
Package: TO-247-3 Exposed Pad
Quantity Available: Over 68,000 pieces
Best price for STGYA120M65DF2 (Email: [email protected])
Product Parameters
- Manufacturer Part Number : STGYA120M65DF2
- Manufacturer : STMicroelectronics
- Description : TRENCH GATE FIELD-STOP IGBT, M S
- Packaging : Tube
- Series : *
- Part Status : Active
- IGBT Type : NPT, Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max) : 650V
- Current - Collector (Ic) (Max) : 160A
- Current - Collector Pulsed (Icm) : 360A
- Vce(on) (Max) @ Vge, Ic : 1.95V @ 15V, 120A
- Power - Max : 625W
- Switching Energy : 1.8mJ (on), 4.41mJ (off)
- Input Type : Standard
- Gate Charge : 420nC
- Td (on/off) @ 25°C : 66ns/185ns
- Test Condition : 400V, 120A, 4.7 Ohm, 15V
- Reverse Recovery Time (trr) : 202ns
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Package / Case : TO-247-3 Exposed Pad
- Supplier Device Package : MAX247?
- Other Part Number : 497-16976-ND
- Delivery Time : Ship within 1 day.
- Manufacturer Production time : 6-8 weeks
- Weight : 0.001KG
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